STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF STATE-OF-THE-ART CUBIC SIC FILMS

被引：33

作者：

STOEMENOS, J

DEZAUZIER, C

ARNAUD, G

CONTRERAS, S

CAMASSEL, J

PASCUAL, J

ROBERT, JL

机构：

[1] UNIV MONTPELLIER 2,CNRS,GES,F-34095 MONTPELLIER 5,FRANCE

[2] UNIV AUTOMONA BARCELONA,DEPT FIS,E-08193 BARCELONA,SPAIN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; OPTICAL PROPERTIES; ELECTRICAL MEASUREMENTS;

D O I：

10.1016/0921-5107(94)04037-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural, optical and electrical characteristics of commercially available cubic (beta)-SiC films grown on [001] silicon waters were reported. For the structural characterization, combined plane view and cross-section transmission electron spectroscopy observations were made. For the optical investigations, low-temperature photoluminescence (2 K) and room temperature Raman and infrared spectra were measured. For the electrical characterization, Hall effect and resistivity measurements were performed in the temperature range 15-500 K.

引用

页码：160 / 164

页数：5

共 21 条

[1]

BECOURT N, 1993, THESIS U MONTPELLIER

[2] PHOTOLUMINESCENCE CHARACTERIZATION OF CUBIC SIC GROWN BY CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].