RECOIL IMPLANTATION OF ALPHA-SOURCES FOR THICKNESS MEASUREMENT OF THIN-FILMS

被引：13

作者：

KELSON, I

LEVY, Y

REDMARD, E

机构：

[1] School of Physics and Astronomy, Tel Aviv University, Tel Aviv

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 01期

关键词：

D O I：

10.1088/0022-3727/28/1/016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sequence of radioactive decays can be used to implant alpha-emitting sources in substrates for thickness measurements of films grown on them. Starting with Th-228, both direct recoil implantation of Ra-224 and a two-stage recoil implantation of Pb-212 were performed. The thickness of germanium layers grown on gallium arsenide was determined by measuring the energy loss of the alpha particles traversing them. The results were found to be consistent with those obtained by other methods. The special advantages of the present procedure are discussed.

引用

页码：100 / 104

页数：5

共 8 条

[1] THE EPITAXIAL-GROWTH ON CAF2 AND BAF2 SINGLE-CRYSTAL FILMS ON A SAPPHIRE SUBSTRATE [J].