THE EPITAXIAL-GROWTH ON CAF2 AND BAF2 SINGLE-CRYSTAL FILMS ON A SAPPHIRE SUBSTRATE

被引：3

作者：

BARKAI, M

GRUNBAUM, E

DEUTSCHER, G

机构：

[1] TEL AVIV UNIV,FAC ENGN,IL-69978 TEL AVIV,ISRAEL

[2] TEL AVIV UNIV,SCH PHYS & ASTRON,IL-69978 TEL AVIV,ISRAEL

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93800-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crsytal CaF2 and BaF2 films are being used as intermediate substrates for the epitaxial growth of single-crystal semiconductors (Ge and GaAs) films. p-jununctions in these films serve as solar cells. By dissolving the CaF2 or BaF2 in water the films are separated from the expensive substrate, which thus may be re-used. The epitaxial growth of CaF2 or BaF2 films by evaporation in uhv (MBC) onto a sapphire (110) wafer was studied. The growth conditions, the crystalline and surface quality and the epitaxial orientation relationships were determined by in situ reflection high energy electron diffraction (RHEED). © 1990.

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页码：847 / 850

页数：4

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