SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES

被引：77

作者：

FATHAUER, RW ^{[1
]}

SCHOWALTER, LJ ^{[1
]}

机构：

[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：519 / 521

页数：3

共 13 条

[1] HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES [J].

ASANO, T ;

ISHIWARA, H ;

KAIFU, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1474-1481

[2] CALCULATION OF SURFACE ENERGY OF (110) FACE OF SOME CRYSTALS POSSESSING FLUORITE STRUCTURE [J].

BENSON, GC ;

CLAXTON, TA .

CANADIAN JOURNAL OF PHYSICS, 1963, 41 (08) :1287-&

[3] SURFACE-STRUCTURES OF FLUORITE CRYSTALS [J].

DESAI, CC .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (03) :289-293

[4] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J].

GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2208-2218

[5] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM [J].

HARRISON, TR ;

MANKIEWICH, PM ;

DAYEM, AH .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1102-1104

[6]

ISHIWARA H, 1983, UNPUB NOV MAT RES SO

[7] EPITAXIAL-GROWTH OF BAF2 ON GE AND INP [J].

PHILLIPS, JM ;

FELDMAN, LC ;

GIBSON, JM ;

MCDONALD, ML .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :563-564

[8] GROWTH OF SINGLE-CRYSTAL SRF2 (001)/GAAS (001) STRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

SULLIVAN, PW .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :190-192

[9] INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES [J].

SULLIVAN, PW ;

FARROW, RFC ;

JONES, GR .

JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :403-413

[10] STABILITY OF IONIC-CRYSTAL SURFACES [J].

TASKER, PW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22) :4977-4984

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