GROWTH OF SINGLE-CRYSTAL SRF2 (001)/GAAS (001) STRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

SULLIVAN, PW

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来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期

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D O I：

10.1063/1.94704

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：190 / 192

页数：3

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[1] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS
FARROW, RFC
SULLIVAN, PW
WILLIAMS, GM
JONES, GR
CAMERON, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420
[2] FONTAINE C, 1983, 2ND EUR WORKSH MOL B
[3] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM
HARRISON, TR
MANKIEWICH, PM
DAYEM, AH
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1102 - 1104
[4] EPITAXIAL-GROWTH OF ELEMENTAL SEMICONDUCTOR-FILMS ONTO SILICIDE/SI AND FLUORIDE/SI STRUCTURES
ISHIWARA, H
ASANO, T
FURUKAWA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 266 - 271
[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI
ISHIWARA, H
ASANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[6] ISHIWARA H, 1983, JPN J APPL PHYS S, V221, P201
[7] ELECTRONIC PROPERTIES OF (100) SURFACES OF GASB AND INAS AND THEIR ALLOYS WITH GAAS
LUDEKE, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) : 304 - 314
[8] RUTHERFORD BACKSCATTERING CHANNELING AND TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF EPITAXIAL BAF2 FILMS ON GE AND INP
PHILLIPS, JM
FELDMAN, LC
GIBSON, JM
MCDONALD, ML
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 246 - 249
[9] SULLIVAN PA, UNPUB
[10] INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES
SULLIVAN, PW
FARROW, RFC
JONES, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 403 - 413