EPITAXIAL-GROWTH OF ELEMENTAL SEMICONDUCTOR-FILMS ONTO SILICIDE/SI AND FLUORIDE/SI STRUCTURES

[1] EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10): : L630 - L632

[2] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150

[3] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191

[4] ASANO T, UNPUB

[5] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[6] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[7] CAMPISANO SU, 1976, ION BEAM SURFACE LAY, V2, P585

[8] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[9] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[10] STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL METAL-FILMS GROWN ON ARGON ION BOMBARDED AND ANNEALED (001)INP [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 292 - 301

[1] EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10): : L630 - L632

[2] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150

[3] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191

[4] ASANO T, UNPUB

[5] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[6] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[7] CAMPISANO SU, 1976, ION BEAM SURFACE LAY, V2, P585

[8] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[9] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[10] STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL METAL-FILMS GROWN ON ARGON ION BOMBARDED AND ANNEALED (001)INP [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 292 - 301