HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF (CA,SR)F2/GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

HERAL, H ^{[1
]}

BERNARD, L ^{[1
]}

ROCHER, A ^{[1
]}

FONTAINE, C ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] LAB AUTOMAT ANAL SYST,F-31400 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2410 / 2412

页数：3

共 9 条

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[7] MOLECULAR-BEAM EPITAXY OF INSULATING FLUORIDE SEMICONDUCTOR HETEROSTRUCTURES [J].

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[8]

PHILLIPS JM, 1984, MATER RES SOC S P, V25, P381

[9] EPITAXIAL RELATIONS IN CAXSR1-XF2 FILMS GROWN ON GAAS (111) AND GE(111) SUBSTRATES [J].

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