MOLECULAR-BEAM EPITAXY OF INSULATING FLUORIDE SEMICONDUCTOR HETEROSTRUCTURES

被引:10
作者
MUNOZYAGUE, A
FONTAINE, C
机构
关键词
D O I
10.1016/0039-6028(86)90893-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:626 / 634
页数:9
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共 29 条
[1]   CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
APPLIED PHYSICS LETTERS, 1975, 27 (06) :325-327
[2]   EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J].
ASANO, T ;
ISHIWARA, H .
APPLIED PHYSICS LETTERS, 1983, 42 (06) :517-519
[3]   EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES [J].
ASANO, T ;
ISHIWARA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10) :L630-L632
[4]   AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J].
ASANO, T ;
ISHIWARA, H .
THIN SOLID FILMS, 1982, 93 (1-2) :143-150
[5]   EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J].
ASANO, T ;
ISHIWARA, H .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3566-3570
[6]   MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].
FARROW, RFC ;
SULLIVAN, PW ;
WILLIAMS, GM ;
JONES, GR ;
CAMERON, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420
[7]   AUGER-ELECTRON SPECTROSCOPY STUDY OF THE EPITAXIAL-GROWTH MODE OF (CA, SR)F2 ON GAAS(100) [J].
FONTAINE, C ;
CASTANO, JL ;
CASTAGNE, J ;
MUNOZYAGUE, A .
SURFACE SCIENCE, 1986, 168 (1-3) :681-687
[8]  
FONTAINE C, 1984, GAAS RELATED COMPOUN
[9]  
FONTAINE C, 1985, 3RD EUR MOL BEAM EP
[10]  
FONTAINE C, 1983, 2ND EUR WORKSH MBE