MOLECULAR-BEAM EPITAXY OF INSULATING FLUORIDE SEMICONDUCTOR HETEROSTRUCTURES

被引：10

作者：

MUNOZYAGUE, A

FONTAINE, C

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90893-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：626 / 634

页数：9

共 29 条

[21] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SISKOS, S ;

FONTAINE, C ;

MUNOZYAGUE, A .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1146-1148

[22]

Siskos S., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P71

[23] GROWTH OF SR1-XBAXF2 FILMS ON INAS BY MOLECULAR-BEAM EPITAXY [J].

SUGIYAMA, K .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1733-1737

[24] GROWTH OF SINGLE-CRYSTAL SRF2 (001)/GAAS (001) STRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

SULLIVAN, PW .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :190-192

[25] INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES [J].

SULLIVAN, PW ;

FARROW, RFC ;

JONES, GR .

JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :403-413

[26] GROWTH OF SEMICONDUCTOR INSULATOR STRUCTURES - GAAS/FLUORIDE/GAAS (001) [J].

SULLIVAN, PW ;

BOWER, JE ;

METZE, GM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :500-507

[27] LATTICE-MATCHED SINGLE-CRYSTALLINE DIELECTRIC FILMS (BAXSR1-XF2) ON INP(001) GROWN BY MOLECULAR-BEAM EPITAXY [J].

TU, CW ;

SHENG, TT ;

MACRANDER, AT ;

PHILLIPS, JM ;

GUGGENHEIM, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :24-26

[28] GROWTH OF SINGLE-CRYSTALLINE EPITAXIAL GROUP-II FLUORIDE FILMS ON INP(001) BY MOLECULAR-BEAM EPITAXY [J].

TU, CW ;

SHENG, TT ;

READ, MH ;

SCHLIER, AR ;

JOHNSON, JG ;

JOHNSTON, WD ;

BONNER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) :2081-2087

[29] EPITAXIAL INP/FLUORIDE/INP(001) DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

TU, CW ;

FORREST, SR ;

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :569-571

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