GROWTH OF SINGLE-CRYSTALLINE EPITAXIAL GROUP-II FLUORIDE FILMS ON INP(001) BY MOLECULAR-BEAM EPITAXY

被引：37

作者：

TU, CW

SHENG, TT

READ, MH

SCHLIER, AR

JOHNSON, JG

JOHNSTON, WD

BONNER, WA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 10期

关键词：

D O I：

10.1149/1.2119527

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2081 / 2087

页数：7

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共 22 条

[1] ANDREWS KW, 1971, INTERPRETATION ELECT, P152
[2] THERMAL REMOVAL OF SURFACE CARBON FROM GAAS SUBSTRATE USED IN MOLECULAR-BEAM EPITAXY
CHANG, CA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 663 - 665
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN
CHENG, KY
CHO, AY
WAGNER, WR
BONNER, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021
[4] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843
[5] EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 782 - &
[6] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS
FARROW, RFC
SULLIVAN, PW
WILLIAMS, GM
JONES, GR
CAMERON, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420
[7] GROWTH OF INDIUM-PHOSPHIDE FILMS FROM IN AND P2 BEAMS IN ULTRAHIGH-VACUUM
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (11) : L121 - L124
[8] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[9] INSIGNIFICANCE OF LATTICE MISFIT FOR EPITAXY
GREEN, AK
DANCY, J
BAUER, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01): : 159 - &
[10] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM
HARRISON, TR
MANKIEWICH, PM
DAYEM, AH
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1102 - 1104