EPITAXIAL INP/FLUORIDE/INP(001) DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：67

作者：

TU, CW

FORREST, SR

JOHNSTON, WD

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.94428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：569 / 571

页数：3

共 18 条

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[8] EPITAXIAL-GROWTH OF ELEMENTAL SEMICONDUCTOR-FILMS ONTO SILICIDE/SI AND FLUORIDE/SI STRUCTURES [J].

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[9] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

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