EPITAXIAL RELATIONS IN CAXSR1-XF2 FILMS GROWN ON GAAS (111) AND GE(111) SUBSTRATES

被引：32

作者：

TSUTSUI, K

ISHIWARA, H

ASANO, T

FURUKAWA, S

机构：

来源：

关键词：

D O I：

10.1063/1.95732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1131 / 1133

页数：3

共 8 条

[1] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES
ASANO, T
ISHIWARA, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 517 - 519
[2] HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES
ASANO, T
ISHIWARA, H
KAIFU, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1474 - 1481
[3] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI
ASANO, T
ISHIWARA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191
[4] ISHIWARA H, 1985, JPN J APPL PHYS, V24, pL944
[5] ISHIWARA H, 1984, JPN J APPL PHYS, V23, pL801
[6] EPITAXIAL RELATIONS IN ALKALINE-EARTH FLUORIDE SEMICONDUCTOR SYSTEMS
PHILLIPS, JM
YASHINOVITZ, CJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 415 - 417
[7] RUTHERFORD BACKSCATTERING CHANNELING AND TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF EPITAXIAL BAF2 FILMS ON GE AND INP
PHILLIPS, JM
FELDMAN, LC
GIBSON, JM
MCDONALD, ML
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 246 - 249
[8] EPITAXIAL-GROWTH OF BAF2 FILMS ONTO PBSE AND ELECTRONIC-PROPERTIES OF THE INTERFACE
ZOGG, H
VOGT, W
MELCHIOR, H
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 286 - 288