EPITAXIAL-GROWTH OF BAF2 FILMS ONTO PBSE AND ELECTRONIC-PROPERTIES OF THE INTERFACE

被引：16

作者：

ZOGG, H

VOGT, W

MELCHIOR, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.95175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：286 / 288

页数：3

共 13 条

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[Anonymous], 1970, MONOGRAPHS SEMICONDU

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[3]

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PHILLIPS, JM .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :828-830

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HOLLOWAY, H .

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[7]

HOLLOWAY H, 1980, PHYS THIN FILMS, V11, P105

[8] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[9] HOT WALL EPITAXY [J].

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[10]

MOULIN H, 1977, INT ELECTRON DEVICES, P555

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