EPITAXIAL-GROWTH OF SILICON AND GERMANIUM FILMS ON CAF2/SI

被引：18

作者：

BARKAI, M ^{[1
]}

LEREAH, Y ^{[1
]}

GRUNBAUM, E ^{[1
]}

DEUTSCHER, G ^{[1
]}

机构：

[1] TEL AVIV UNIV,FAC EXACT SCI,SCH PHYS & ASTRON,IL-69978 TEL AVIV,ISRAEL

来源：

THIN SOLID FILMS | 1986年 / 139卷 / 03期

关键词：

D O I：

10.1016/0040-6090(86)90058-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：287 / 297

页数：11

相关论文

共 8 条

[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON
ASANO, T
ISHIWARA, H
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150
[2] SILICON FILMS ON FOREIGN SUBSTRATES FOR SOLAR-CELLS
CHU, TL
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 45 - 60
[3] Deutscher S., 1981, U.S. Patent, Patent No. [4,255,208, 4255208]
[4] DOUBLE POSITIONING IN SILVER AND GOLD LAYERS DEPOSITED ON MICA
DICKSON, EW
PASHLEY, DW
[J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (80): : 1315 - &
[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI
ISHIWARA, H
ASANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[6] LEREAH Y, 1984, PHILOS MAG A, V50, P1
[7] LEREAH Y, 1982, 10TH P INT C EL MICR, V2, P381
[8] ELECTRON MICROSCOPY AND DIFFRACTION OF TWINNED STRUCTURES IN EVAPORATED FILMS OF GOLD
PASHLEY, DW
STOWELL, MJ
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (94): : 1605 - &