HALL-MOBILITY OF TE-DOPED IN1-XGAXP AT 300 K

被引：12

作者：

KATO, T ^{[1
]}

SHIMIZU, A ^{[1
]}

ISHIDA, T ^{[1
]}

机构：

[1] YAMANASHI UNIV,FAC ENGN,DEPT ELECTR ENGN,KOFU 400,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 09期

关键词：

D O I：

10.1143/JJAP.13.1481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1481 / 1482

页数：2

共 5 条

[1] STIMULATED EMISSION IN IN1-XGAXP [J].

BURNHAM, RD ;

HOLONYAK, N ;

KEUNE, DL ;

SCIFRES, DR ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1970, 17 (10) :430-&

[2] REPRODUCIBLE PREPARATION OF HOMOGENEOUS IN1-XGAXP MIXED CRYSTALS [J].

ITOH, H ;

HARA, K ;

TANAKA, A ;

SUKEGAWA, T .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :348-&

[3] CRYSTAL SYNTHESIS, ELECTRICAL PROPERTIES, AND SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE OF IN1-XGAXP-N GROWN FROM SOLUTION [J].

MACKSEY, HM ;

HOLONYAK, N ;

DUPUIS, RD ;

CAMPBELL, JC ;

ZACK, GW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1333-1341

[4] GROWTH OF IN1-XGAXP CRYSTALS FROM SOLUTION [J].

OKUNO, Y ;

SUTO, K ;

NISHIZAW.JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (03) :388-&

[5] ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS [J].

ONTON, A ;

LORENZ, MR ;

REUTER, W .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3420-&

← 1 →