ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS

被引：114

作者：

ONTON, A

LORENZ, MR

REUTER, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.1660748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3420 / &

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[6] RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E)
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[8] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
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[9] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV
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[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +
[10] GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE
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