ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS

[21] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 3998 - +

[22] OPTICAL ABSORPTION AND VACUUM-ULTRAVIOLET REFLECTANCE OF GAN THIN FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (25) : 1421 - &

[23] RADIATIVE RECOMBINATION IN N-TYPE INP [J]. PHYSICAL REVIEW, 1967, 157 (03): : 672 - &

[24] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 421 - &

[25] BAND GAP OF GALLIUM PHOSPHIDE FROM 0 TO 900 DEGREES K AND LIGHT EMISSION FROM DIODES AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1968, 171 (03): : 876 - &

[26] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &

[27] LORENZ MR, 1970, 10 P INT C PHYS SEM, P444

[28] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[29] CONDUCTION BANDS IN INL-XALXP [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4205 - &

[30] ONTON A, 1971, 3 P INT S GAAS REL C, P222

[21] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 3998 - +

[22] OPTICAL ABSORPTION AND VACUUM-ULTRAVIOLET REFLECTANCE OF GAN THIN FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (25) : 1421 - &

[23] RADIATIVE RECOMBINATION IN N-TYPE INP [J]. PHYSICAL REVIEW, 1967, 157 (03): : 672 - &

[24] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 421 - &

[25] BAND GAP OF GALLIUM PHOSPHIDE FROM 0 TO 900 DEGREES K AND LIGHT EMISSION FROM DIODES AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1968, 171 (03): : 876 - &

[26] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &

[27] LORENZ MR, 1970, 10 P INT C PHYS SEM, P444

[28] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[29] CONDUCTION BANDS IN INL-XALXP [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4205 - &

[30] ONTON A, 1971, 3 P INT S GAAS REL C, P222