THEORY FOR INTERVALLEY TRANSFER EFFECT IN 2-VALLEY SEMICONDUCTORS

被引：13

作者：

TOYABE, T ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 09期

关键词：

D O I：

10.1143/JJAP.13.1404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1404 / 1413

页数：10

共 18 条

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[6] NEW THEORY FOR DOMAIN DYNAMICS IN 2-VALLEY SEMICONDUCTORS [J].

KAO, KC .

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[7] DIRECT MICROSCOPIC SIMULATION OF GUNN-DOMAIN PHENOMENA [J].

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[8]

MAKAMURA M, 1973, SOLID STATE ELECTRON, V16, P75

[9] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

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[10]

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