NOISE AND POWER SATURATION IN SINGLY TUNED IMPATT OSCILLATORS

被引：11

作者：

COWLEY, AM

FAZARINC, ZA

HALL, RD

HAMILTON, SA

YEN, CS

ZETTLER, RA

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1970.1050139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：338 / &

共 10 条

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[2]

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[3]

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[4] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

[5]

SCHARFETTER DL, 1969, IEEE T ELECTRON DEVI, VED16, P64

[6]

SCHARFETTER DL, 1966, JUN SOL STAT DEV RES

SWAN, CB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (09) :1617-&

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH5

[9]

WATSON HA, MICROWAVE SEMICONDUC

[10] BATCH FABRICATION OF INTEGRAL-HEAT-SINK IMPATT DIODES [J].

ZETTLER, RA ;

COWLEY, AM .