EFFECT OF THE SIGN OF MISFIT STRAIN ON THE DISLOCATION-STRUCTURE AT INTERFACES OF HETEROEPITAXIAL GAASXP1-X FILMS

被引：23

作者：

PETRUZZELLO, J ^{[1
]}

LEYS, MR ^{[1
]}

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22101 LUND,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2414 / 2416

页数：3

共 6 条

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[2] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].

DODSON, BW ;

TAYLOR, PA .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :642-644

[3] SILICON STRAINED LAYERS GROWN ON GAP(001) BY MOLECULAR-BEAM EPITAXY [J].

MAREE, PMJ ;

OLTHOF, RIJ ;

FRENKEN, JWM ;

VANDERVEEN, JF ;

BULLELIEUWMA, CWT ;

VIEGERS, MPA ;

ZALM, PC .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3097-3103

[4]

MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559

[5] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

[6] CRYSTAL INTERFACES .2. FINITE OVERGROWTHS [J].

VANDERMERWE, JH .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :123-&

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