SILICON STRAINED LAYERS GROWN ON GAP(001) BY MOLECULAR-BEAM EPITAXY

被引：28

作者：

MAREE, PMJ ^{[1
]}

OLTHOF, RIJ ^{[1
]}

FRENKEN, JWM ^{[1
]}

VANDERVEEN, JF ^{[1
]}

BULLELIEUWMA, CWT ^{[1
]}

VIEGERS, MPA ^{[1
]}

ZALM, PC ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.335811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3097 / 3103

页数：7

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