CRYSTALLINE PHASES OF II-VI COMPOUND SEMICONDUCTORS GROWN BY PULSED-LASER DEPOSITION

被引：59

作者：

SHEN, WP ^{[1
]}

KWOK, HS ^{[1
]}

机构：

[1] HONG KONG UNIV SCI & TECHNOL,DEPT ELECT & ELECTR ENGN,HONG KONG,HONG KONG

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期

关键词：

D O I：

10.1063/1.112749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

II-VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on (111) and (100) InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality (fully in-plane aligned) and mirror-like surface morphology. It was found that, on (111)-oriented substrates, CdS and CdSe films were in the hexagonal phase with the c axis perpendicular to the surface, while ZnS and ZnSe films were in the cubic phase. The films grown on (100)-oriented substrates were all cubic. These high quality films should be useful in optoelectronics applications. (C) 1994 American Institute of Physics.

引用

页码：2162 / 2164

页数：3

共 19 条

[1] THIN-FILM CDS/CDTE SOLAR-CELL WITH 15.8-PERCENT EFFICIENCY [J].

BRITT, J ;

FEREKIDES, C .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2851-2852

[2]

CARDONA M, 1965, PHYS REV A, V140, P633

[3] GROWTH OF THIN-FILMS BY LASER-INDUCED EVAPORATION [J].

CHEUNG, JT ;

SANKUR, H .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01) :63-109

[4] GROWTH OF HGCDTE EPILAYERS WITH ANY PREDESIGNED COMPOSITIONAL PROFILE BY LASER MOLECULAR-BEAM EPITAXY [J].

CHEUNG, JT ;

MADDEN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :705-708

[5] PICOJOULE, SUBNANOSECOND, ALL-OPTICAL SWITCHING USING BOUND EXCITONS IN CDS [J].

DAGENAIS, M ;

SHARFIN, WF .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :230-232

[6] ELECTRON-PUMPED HIGH-EFFICIENCY SEMICONDUCTOR-LASER [J].

DANEU, V ;

DEGLORIA, DP ;

SANCHEZ, A ;

TONG, F ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :546-548

[7] EPITAXIAL-GROWTH OF (100) CDTE ON (100) GAAS INDUCED BY PULSED LASER EVAPORATION [J].

DUBOWSKI, JJ ;

WILLIAMS, DF ;

SEWELL, PB ;

NORMAN, P .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1081-1083

[8] STRUCTURAL AND PHOTOLUMINESCENCE CHARACTERIZATION OF CDS/GAAS FILMS AND CDS-ZNS STRAINED-LAYER SUPERLATTICES GROWN BY LOW-PRESSURE MOCVD METHOD [J].

ENDOH, Y ;

KAWAKAMI, Y ;

TAGUCHI, T ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2199-L2202

[9] HIGH-QUALITY YBCO FILMS GROWN OVER LARGE AREAS BY PULSED LASER DEPOSITION [J].

GREER, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1821-1826

[10] HOT-WALL EPITAXY OF CDS THIN-FILMS AND THEIR PHOTOLUMINESCENCE [J].

HUMENBERGER, J ;

LINNERT, G ;

LISCHKA, K .

THIN SOLID FILMS, 1984, 121 (01) :75-83

← 1 2 →