INFLUENCE OF A GASEOUS BOUNDARY-LAYER ON THE OXIDATION OF REACTION-BONDED SILICON-NITRIDE AT 1400-DEGREES-C

被引：6

作者：

BARLIER, P

TORRE, JP

机构：

来源：

关键词：

D O I：

10.1007/BF01028351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 237

页数：3

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