HIGH-POWER SINGLEMODE EDGE-EMITTING MASTER OSCILLATOR POWER-AMPLIFIER

被引：3

作者：

OBRIEN, S

PARKE, R

WELCH, DF

MEHUYS, D

SCIFRES, D

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 15期

关键词：

LASERS; SEMICONDUCTOR LASERS; OPTOELECTRONICS;

D O I：

10.1049/el:19920909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500-mu-m long singlemode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at approximately 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mW CW

引用

页码：1429 / 1431

页数：3

共 6 条

[1]

CARLSON NW, 1991, 1991 C LAS EL, V10, P250

[2] ANALYSIS OF 2ND-ORDER GRATINGS [J].