SINGLE-MODE INGAAS GAAS-LASER DIODES OPERATING AT 980 NM

被引：31

作者：

MAJOR, JS

PLANO, WE

WELCH, DF

SCIFRES, D

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 06期

关键词：

SEMICONDUCTOR LASERS; LASERS; DIODES;

D O I：

10.1049/el:19910339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented describing the operation of single-transverse, single-longitudinal mode strained-layer InGaAs laser diodes operating at lambda = 980 nm. These diodes exhibit single-transverse mode behaviour to beyond 210 mW continuous wave (CW) and single-longitudinal mode behaviour to beyond 150 mW CW. The maximum output power is approximately 350 mW CW. The threshold current of these lasers is approximately 10 mA, with a differential quantum efficiency of 85%. The total efficiency of these diodes exceeds 50% at an output power of 100 mW.

引用

页码：539 / 541

页数：3

共 9 条

[1] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES
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