High power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 mu-m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9-mu-m-wide ridge and 600-mu-m-long cavity.
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BAIIARGEON NJN, 1988, APPL PHYS LETT, V53, P457