HIGH-POWER 0.98 MU-M GAINAS STRAINED QUANTUM WELL LASERS FOR ER-3+-DOPED FIBER AMPLIFIER

被引：36

作者：

OKAYASU, M

TAKESHITA, T

YAMADA, M

KOGURE, O

HORIGUCHI, M

FUKUDA, M

KOZEN, A

OE, K

UEHARA, S

机构：

[1] NTT Opto-Electronics Lab, Japan

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 23期

关键词：

Fiber Amplifier - Quantum Optics - Quantum Well Lasers - Ridge Waveguide;

D O I：

10.1049/el:19891050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1563 / 1565

页数：3

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[J]. ELECTRONICS LETTERS, 1987, 23 (25) : 1334 - 1335
[2] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FEKETA, D
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1659 - 1660
[3] EFFICIENT PUMP WAVELENGTHS OF ERBIUM-DOPED FIBER OPTICAL AMPLIFIER
LAMING, RI
FARRIES, MC
MORKEL, PR
REEKIE, L
PAYNE, DN
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[J]. ELECTRONICS LETTERS, 1989, 25 (01) : 12 - 14
[4] CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M
STUTIUS, W
GAVRILOVIC, P
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[J]. ELECTRONICS LETTERS, 1988, 24 (24) : 1493 - 1494
[5] YAMADA M, UNPUB ER3 PLUS DOPED