SUBSTRATE-DEPENDENT INTERNAL-STRESS IN SPUTTERED ZINC-OXIDE THIN-FILMS

被引：71

作者：

JOU, JH ^{[1
]}

HAN, MY ^{[1
]}

CHENG, DJ ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU 31015,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stresses in zinc oxide (ZnO) films prepared by radio frequency (rf) magnetron sputtering have been studied using a bending beam technique. The stresses exhibited at room temperature have been found to be strongly substrate dependent. The films deposited on gallium-arsenide (GaAs) substrates have exhibited much less compressive stress than those on silicon. This was contrary to what was expected. This may be attributed to: as revealed by x-ray diffraction experiments, the films grown on GaAs are less crystalline so that peening effect could occur less intensively during deposition. The stress varies with different processing conditions, especially substrate temperature and total gas pressure.

引用

页码：4333 / 4336

页数：4

共 17 条

[1] ZNO FILMS FOR SURFACE ACOUSTOOPTIC DEVICES ON NONPIEZOELECTRIC SUBSTRATES [J].