NOISE IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HEMTS FROM 10-HZ TO 18-GHZ

被引：37

作者：

PLANA, R ^{[1
]}

ESCOTTE, L ^{[1
]}

LLOPIS, O ^{[1
]}

AMINE, H ^{[1
]}

PARRA, T ^{[1
]}

GAYRAL, M ^{[1
]}

GRAFFEUIL, J ^{[1
]}

机构：

[1] UNIV PAUL SABATIER,F-31077 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 05期

关键词：

D O I：

10.1109/16.210190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise properties of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's (PHEMT's) have been investigated simultaneously in the low and intermediate frequency range (10 Hz to 150 MHz) and in the microwave range (4 to 18 GHz) and compared to the noise of more classical devices such as MESFET's and GaAlAs/GaAs HEMT's. Unlike the other commercially available devices, PHEMT's exhibit the unique capability of providing simultaneously state-of-the-art microwave noise performance and a reasonable low-frequency excess noise.

引用

页码：852 / 858

页数：7

共 29 条

[1]

ABDALA MA, 1991, NOISE PHYSICAL SYSTE, P187

[2] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].