GAAS-FETS WITH A FLICKER-NOISE CORNER BELOW 1 MHZ

被引：51

作者：

HUGHES, B ^{[1
]}

FERNANDEZ, NG ^{[1
]}

GLADSTONE, JM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV MICROWAVE TECHNOL,SPECIAL PROJECTS RES & DEV SECT,SANTA ROSA,CA 95401

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.22989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：733 / 741

页数：9

共 20 条

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[5]

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[6] 1/F NOISE IS NO SURFACE EFFECT [J].

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[7]

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[8]

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[9] LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS [J].

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[10] NOISE BEHAVIOR OF 1-MU-M GATE-LENGTH MODULATION-DOPED FETS FROM 10(-2) TO 10(8) HZ [J].

LIU, SM ;

DAS, MB ;

KOPP, W ;

MORKOC, H .

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