LOW-FREQUENCY NOISE IN GALLIUM-ARSENIDE STRUCTURES

被引：7

作者：

HELLUMS, JR

RUCKER, LM

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 11期

关键词：

D O I：

10.1016/0038-1101(84)90068-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：949 / 952

页数：4

共 16 条

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[10] GENERATION-RECOMBINATION NOISE IN CHANNEL OF GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

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