DISCRIMINATION BETWEEN 2 NOISE MODELS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：20

作者：

PARK, HS

VANDERZIEL, A

ZIJLSTRA, RJJ

LIU, ST

机构：

[1] STATE UNIV UTRECHT, FYS LAB, UTRECHT, NETHERLANDS

[2] HONEYWELL INC, CTR TECHNOL, BLOOMINGTON, MN 55420 USA

来源：

关键词：

D O I：

10.1063/1.328492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：296 / 299

页数：4

共 11 条

[1]

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[2]

BOSMAN G, 1980, PHYS LETT A, V78, P305

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PHYSICA, 1972, 60 (01) :130-+

[4] 1-F NOISE [J].

HOOGE, FN .

PHYSICA B & C, 1976, 83 (01) :14-23

[5]

HSU ST, 1977, RCA REV, V38, P226

[6]

KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505

[7] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J].

KLAASSEN, FM .

[8]

van der Ziel A., 1979, Third Biennial University/Industry/Government Microelectronics Symposium, P102

WILSON, CL .

VANDAMME, LKJ .