MODEL FOR 1-F NOISE IN MOS-TRANSISTORS BIASED IN THE LINEAR REGION

[1] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1371 - +

[2] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[3] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[4] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J]. ELECTRONICS LETTERS, 1974, 10 (13) : 259 - 260

[5] LATTICE SCATTERING CAUSES 1-F NOISE [J]. PHYSICS LETTERS A, 1978, 66 (04) : 315 - 316

[6] 1-F NOISE [J]. PHYSICA B & C, 1976, 83 (01): : 14 - 23

[7] HSING CT, 1977, THESIS U FLORIDA

[8] HUBIN M, 1972, CR ACAD SCI B PHYS, V275, P195

[9] LIESTIKO O, 1965, IEEE T ELECTRON DEV, V12, P248

[10] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &

[1] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1371 - +

[2] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[3] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[4] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J]. ELECTRONICS LETTERS, 1974, 10 (13) : 259 - 260

[5] LATTICE SCATTERING CAUSES 1-F NOISE [J]. PHYSICS LETTERS A, 1978, 66 (04) : 315 - 316

[6] 1-F NOISE [J]. PHYSICA B & C, 1976, 83 (01): : 14 - 23

[7] HSING CT, 1977, THESIS U FLORIDA

[8] HUBIN M, 1972, CR ACAD SCI B PHYS, V275, P195

[9] LIESTIKO O, 1965, IEEE T ELECTRON DEV, V12, P248

[10] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &