GENERATION-RECOMBINATION NOISE IN CHANNEL OF GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS

被引：26

作者：

SODINI, D ^{[1
]}

TOUBOUL, A ^{[1
]}

LECOY, G ^{[1
]}

SAVELLI, M ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC, CNRS, CTR ETUD ELECTR SOLIDES, 34060 MONTPELLIER, FRANCE

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 02期

关键词：

D O I：

10.1049/el:19760033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：42 / 43

页数：2

共 8 条

[1] LOW-FREQUENCY NOISE IN GAAS SCHOTTKY-GATE FETS [J].

GRAFFEUIL, J ;

CAIMINADE, J .

ELECTRONICS LETTERS, 1974, 10 (13) :266-268

[2] TEMPERATURE DEPENDENCE OF LOW-FREQUENCY EXCESS NOISE IN JUNCTION-GATE FETS [J].

HASLETT, JW ;

KENDALL, EJM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (08) :943-+

[3] GENERATION-RECOMBINATION NOISE PRODUCED IN CHANNEL OF JFETS [J].

HIATT, CF ;

VANDERZIEL, A ;

VANVLIET, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :614-616

[4]

MACWHORTER AL, 1955, MIT80 LINC LAB REP

[5] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[6] FIELD-EFFECT TRANSISTOR NOISE AT LOW TEMPERATURES [J].

SPAULDING, RA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :886-+

[7] CARRIER DENSITY FLUCTUATION NOISE IN FIELD-EFFECT TRANSISTORS [J].

VANDERZIEL, A .

PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1671-&

[8]

WANG KK, 1975, 4TH INT C PHYS ASP N, P160

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