GENERATION-RECOMBINATION NOISE PRODUCED IN CHANNEL OF JFETS

被引：8

作者：

HIATT, CF ^{[1
]}

VANDERZIEL, A ^{[1
]}

VANVLIET, KM ^{[1
]}

机构：

[1] UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 08期

关键词：

D O I：

10.1109/T-ED.1975.18187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：614 / 616

页数：3

相关论文

共 6 条

[1] CARRIER DENSITY FLUCTUATION NOISE IN SILICON JUNCTION FIELD EFFECT TRANSISTORS AT LOW TEMPERATURES [J].

CHURCHILL, MJ ;

LAURITZEN, PO .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :985-+

[2] ANOMALOUS NOISE BEHAVIOR OF JUNCTION-GATE FIELD-EFFECT TRANSISTOR AT LOW TEMPERATURES [J].

KLAASSEN, FM ;

ROBINSON, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) :852-+

[3]

SHOJI M, 1965, THESIS U MINNESOTA

[4] CARRIER DENSITY FLUCTUATION NOISE IN FIELD-EFFECT TRANSISTORS [J].

VANDERZIEL, A .

PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1671-&

[5] THEORY OF GENERATION-RECOMBINATION NOISE IN CHANNEL OF JUNCTION FIELD-EFFECT TRANSISTORS [J].

VANVLIET, KM ;

HIATT, CF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :616-617

[6] THEORY AND EXPERIMENTS OF LOW-FREQUENCY GENERATION-RECOMBINATION NOISE IN MOS TRANSISTORS [J].

YAU, LD ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) :170-+