XPS AND AES STUDY OF REACTIVE TI-SI INTERFACE

被引：5

作者：

BUZANEVA, E ^{[1
]}

VDOVENKOVA, T ^{[1
]}

LITVINENKO, S ^{[1
]}

MAKHNJUK, V ^{[1
]}

STRIKHA, V ^{[1
]}

SKRYSHEVSKY, V ^{[1
]}

SHEVCHUK, P ^{[1
]}

NEMOSHKALENKO, V ^{[1
]}

SENKEVICH, A ^{[1
]}

SHPAK, A ^{[1
]}

机构：

[1] UKRAINIAN ACAD SCI,INST MET PHYS,252142 KIEV,UKRAINE

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1994年 / 68卷

关键词：

D O I：

10.1016/0368-2048(94)02178-3

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The influence of chemically active metal Al deposition on Ti - oxidized silicon interface at 300-430 C has been studied. The results of Ti-Si interface investigation after Al deposition on Ti layer and following annealing are compared with the conclusions of thermodynamical estimates of reaction probabilities in Ti-Si, Ti-SiO2, Al-SiO2, Al-TiO2 systems.

引用

页码：707 / 711

页数：5

共 12 条

[1]

Cox D. M., 1992, Nanostructured Materials, V1, P161, DOI 10.1016/0965-9773(92)90070-E

[2]

DEMENTEV AP, 1987, POVERCHNOST, V3, P96

[3]

ERSHOV SG, 1981, ZH TEKH FIZ, V12, P2584

[4] INTERPRETATION OF XPS CORE LEVEL SHIFTS AND STRUCTURE OF THIN SILICON-OXIDE LAYERS [J].

FINSTER, J ;

SCHULZE, D ;

BECHSTEDT, F ;

MEISEL, A .

SURFACE SCIENCE, 1985, 152 (APR) :1063-1070

[5]

IVANOV VS, 1986, HDB AUGER SPECTRA CH

[6]

KARAPETYANTC MC, 1968, BASIC THERMODYNAMIC

[7]

LIDIN RA, 1987, HDB NONORGANIC CHEM

[8] METAL-INSULATOR-TRANSITION IN TI2O3 [J].

MOTT, NF .

JOURNAL DE PHYSIQUE, 1981, 42 (02) :277-281

[9]

NEFEDOV VI, 1984, XRAY ELECTRON SPECTR

[10]

Poate JM, 1978, THIN FILMS INTERDIFF

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