INTERPRETATION OF XPS CORE LEVEL SHIFTS AND STRUCTURE OF THIN SILICON-OXIDE LAYERS

被引：80

作者：

FINSTER, J

SCHULZE, D

BECHSTEDT, F

MEISEL, A

机构：

来源：

SURFACE SCIENCE | 1985年 / 152卷 / APR期

关键词：

D O I：

10.1016/0039-6028(85)90521-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1063 / 1070

页数：8

共 19 条

[1] CHEMICAL-SHIFT OF SI 2P CORE LEVEL IN SIOX - CALCULATION OF RELAXATION CONTRIBUTION [J].

BECHSTEDT, F .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 91 (01) :167-176

[2] MEAN FREE-PATH OF PHOTO-ELECTRONS IN SILICON AND SILICON-OXIDES [J].

BECHSTEDT, F ;

HUBNER, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02) :517-526

[3] THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J].

CHEN, M ;

BATRA, IP ;

BRUNDLE, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1216-1220

[4] STUDIES OF THE SI/SIO2 INTERFACE BY ANGULAR DEPENDENT X-RAY PHOTO-ELECTRON SPECTROSCOPY [J].

FINSTER, J ;

SCHULZE, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02) :505-517

[5]

FINSTER J, 1982, INT C XRAY ATOMIC IN, P66

[6]

FOMENKO VS, 1982, EMISSION PROPERTIES

[7] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J].

GARNER, CM ;

LINDAU, I ;

SU, CY ;

PIANETTA, P ;

SPICER, WE .

PHYSICAL REVIEW B, 1979, 19 (08) :3944-3956

[8] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686

[9] INVESTIGATION OF SURFACES BY MEANS OF THE ZR MZETA-RADIATION [J].

HIRSCH, D ;

LEONHARDT, G .

SURFACE SCIENCE, 1979, 89 (1-3) :660-667

[10] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE [J].

HOLLINGER, G .

APPLIED SURFACE SCIENCE, 1981, 8 (03) :318-336

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