STUDIES OF THE SI/SIO2 INTERFACE BY ANGULAR DEPENDENT X-RAY PHOTO-ELECTRON SPECTROSCOPY

被引：38

作者：

FINSTER, J

SCHULZE, D

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：505 / 517

页数：13

共 38 条

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