STUDIES OF THE SI/SIO2 INTERFACE BY ANGULAR DEPENDENT X-RAY PHOTO-ELECTRON SPECTROSCOPY

[11] EVALUATION OF XPS-DATA OF OXIDE LAYERS [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 16 (06) : 463 - 470

[12] DETERMINATION OF REDUCED THICKNESS D-LAMBDA OF THIN-LAYERS BY MEANS OF X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (04) : 287 - 322

[13] Finster J., 1979, Surface and Interface Analysis, V1, P179, DOI 10.1002/sia.740010603

[14] FINSTER J, 1976, WISS Z K MARX U LEIP, V25, P449

[15] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956

[16] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

[17] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389

[18] STUDIES OF SIO2 AND SI-SIO2 INTERFACES BY XPS [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 555 - 561

[19] HELMS CR, 1977, 7TH P INT VAC C 3RD, P2241

[20] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. CHEMICAL PHYSICS LETTERS, 1976, 44 (02) : 225 - 231

[11] EVALUATION OF XPS-DATA OF OXIDE LAYERS [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 16 (06) : 463 - 470

[12] DETERMINATION OF REDUCED THICKNESS D-LAMBDA OF THIN-LAYERS BY MEANS OF X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (04) : 287 - 322

[13] Finster J., 1979, Surface and Interface Analysis, V1, P179, DOI 10.1002/sia.740010603

[14] FINSTER J, 1976, WISS Z K MARX U LEIP, V25, P449

[15] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956

[16] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

[17] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389

[18] STUDIES OF SIO2 AND SI-SIO2 INTERFACES BY XPS [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 555 - 561

[19] HELMS CR, 1977, 7TH P INT VAC C 3RD, P2241

[20] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. CHEMICAL PHYSICS LETTERS, 1976, 44 (02) : 225 - 231