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EVALUATION OF XPS-DATA OF OXIDE LAYERS
被引:46
作者
:
EBEL, MF
论文数:
0
引用数:
0
h-index:
0
机构:
Institut für Technische Physik, Technische Universität Wien
EBEL, MF
LIEBL, W
论文数:
0
引用数:
0
h-index:
0
机构:
Institut für Technische Physik, Technische Universität Wien
LIEBL, W
机构
:
[1]
Institut für Technische Physik, Technische Universität Wien
来源
:
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
|
1979年
/ 16卷
/ 06期
关键词
:
D O I
:
10.1016/0368-2048(79)80043-2
中图分类号
:
O433 [光谱学];
学科分类号
:
0703 ;
070302 ;
摘要
:
XPS with variable take-off angle has been applied to the determination of the thickness of thin oxide layers (SiO2 on Si). The information about D/λox gained by such measurements is strongly influenced by surface roughness. This influence can be demonstrated when the parameters R and D/λox are calculated from sets of the experimental results and for each set the corresponding pair of R and D/λox is plotted in a diagram D/λox = f(R). Having the true value of R it is possible to determine D/λox. With the XPS-results of at least three different oxide layers and their ellipsometric thicknesses De one is able to calculate λSi, λox/λSi and the difference ΔD between De and the XPS-thickness D. © 1974.
引用
收藏
页码:463 / 470
页数:8
相关论文
共 6 条
[1]
DIRECT OBSERVATION OF SURFACE-PROFILE EFFECTS ON X-RAY-PHOTOELECTRON ANGULAR-DISTRIBUTIONS
[J].
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;
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CHEMICAL PHYSICS LETTERS,
1975,
34
(01)
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[2]
DETERMINATION OF REDUCED THICKNESS D-LAMBDA OF THIN-LAYERS BY MEANS OF X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
EBEL, MF
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[3]
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[4]
PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
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→
共 6 条
[1]
DIRECT OBSERVATION OF SURFACE-PROFILE EFFECTS ON X-RAY-PHOTOELECTRON ANGULAR-DISTRIBUTIONS
[J].
BAIRD, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
BAIRD, RJ
;
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论文数:
0
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0
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UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
FADLEY, CS
;
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论文数:
0
引用数:
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h-index:
0
机构:
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
KAWAMOTO, S
;
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论文数:
0
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h-index:
0
机构:
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
MEHTA, M
.
CHEMICAL PHYSICS LETTERS,
1975,
34
(01)
:49
-54
[2]
DETERMINATION OF REDUCED THICKNESS D-LAMBDA OF THIN-LAYERS BY MEANS OF X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
EBEL, MF
论文数:
0
引用数:
0
h-index:
0
EBEL, MF
.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,
1978,
14
(04)
:287
-322
[3]
Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3
[4]
PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
HILL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822
HILL, JM
;
ROYCE, DG
论文数:
0
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h-index:
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;
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;
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h-index:
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机构:
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GRUNTHANER, FJ
.
CHEMICAL PHYSICS LETTERS,
1976,
44
(02)
:225
-231
[5]
QUANTITATIVE CHEMICAL-ANALYSIS BY ESCA
[J].
PENN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
NBS,WASHINGTON,DC 20234
NBS,WASHINGTON,DC 20234
PENN, DR
.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,
1976,
9
(01)
:29
-40
[6]
X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS
[J].
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM,SYST PROD DIV LAB,HOPEWELL JUNCTION,NY 12533
IBM,SYST PROD DIV LAB,HOPEWELL JUNCTION,NY 12533
RAIDER, SI
;
FLITSCH, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM,SYST PROD DIV LAB,HOPEWELL JUNCTION,NY 12533
IBM,SYST PROD DIV LAB,HOPEWELL JUNCTION,NY 12533
FLITSCH, R
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1978,
22
(03)
:294
-303
←
1
→