EVALUATION OF XPS-DATA OF OXIDE LAYERS

被引:46
作者
EBEL, MF
LIEBL, W
机构
[1] Institut für Technische Physik, Technische Universität Wien
关键词
D O I
10.1016/0368-2048(79)80043-2
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
XPS with variable take-off angle has been applied to the determination of the thickness of thin oxide layers (SiO2 on Si). The information about D/λox gained by such measurements is strongly influenced by surface roughness. This influence can be demonstrated when the parameters R and D/λox are calculated from sets of the experimental results and for each set the corresponding pair of R and D/λox is plotted in a diagram D/λox = f(R). Having the true value of R it is possible to determine D/λox. With the XPS-results of at least three different oxide layers and their ellipsometric thicknesses De one is able to calculate λSi, λox/λSi and the difference ΔD between De and the XPS-thickness D. © 1974.
引用
收藏
页码:463 / 470
页数:8
相关论文
共 6 条
[1]   DIRECT OBSERVATION OF SURFACE-PROFILE EFFECTS ON X-RAY-PHOTOELECTRON ANGULAR-DISTRIBUTIONS [J].
BAIRD, RJ ;
FADLEY, CS ;
KAWAMOTO, S ;
MEHTA, M .
CHEMICAL PHYSICS LETTERS, 1975, 34 (01) :49-54
[3]  
Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3
[4]   PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
HILL, JM ;
ROYCE, DG ;
FADLEY, CS ;
WAGNER, LF ;
GRUNTHANER, FJ .
CHEMICAL PHYSICS LETTERS, 1976, 44 (02) :225-231
[5]   QUANTITATIVE CHEMICAL-ANALYSIS BY ESCA [J].
PENN, DR .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (01) :29-40
[6]   X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS [J].
RAIDER, SI ;
FLITSCH, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) :294-303