CRSI2 FORMATION AND REDUCTION OF CR2O3 DURING ANNEALING OF AN OXIDIZED CR OVERLAYER ON SI(111)

被引:8
作者
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
机构
关键词
D O I
10.1016/0039-6028(86)90277-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:27 / 35
页数:9
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共 22 条
[1]   X-RAY PHOTOELECTRON-SPECTROSCOPY OF IRON-OXYGEN SYSTEMS [J].
ALLEN, GC ;
CURTIS, MT ;
HOOPER, AJ ;
TUCKER, PM .
JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1974, (14) :1525-1530
[2]   X-RAY PHOTOELECTRON-AUGER ELECTRON SPECTROSCOPIC STUDY OF INITIAL OXIDATION OF CHROMIUM METAL [J].
ALLEN, GC ;
TUCKER, PM ;
WILD, RK .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1978, 74 :1126-1140
[3]   CONTROL OF TITANIUM-SILICON AND SILICON DIOXIDE REACTIONS BY LOW-TEMPERATURE RAPID THERMAL ANNEALING [J].
BRILLSON, LJ ;
SLADE, ML ;
RICHTER, HW ;
VANDERPLAS, H ;
FULKS, RT .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1080-1082
[4]   CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].
BUTZ, R ;
RUBLOFF, GW ;
HO, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775
[5]   USE OF X-RAY PHOTOELECTRON SPECTROSCOPY TO STUDY BONDING IN CR, MN, FE, AND CO COMPOUNDS [J].
CARVER, JC ;
CARLSON, TA ;
SCHWEITZER, GK .
JOURNAL OF CHEMICAL PHYSICS, 1972, 57 (02) :973-+
[6]   MECHANISM OF GROWTH OF ULTRATHIN SIO2 LAYERS ON SILICIDE SUBSTRATES [J].
CROS, A .
SURFACE SCIENCE, 1985, 162 (1-3) :702-707
[7]   OXIDATION OF TI SILICIDE SURFACES [J].
CROS, A ;
PIRRI, C ;
DERRIEN, J .
SURFACE SCIENCE, 1985, 152 (APR) :1113-1122
[8]  
Cros A., 1983, Passivity of Metals and Semiconductors. Proceedings of the 5th International Symposium, P473
[9]   INTERACTION BETWEEN CHROMIUM-OXIDE AND CHROMIUM SILICIDE [J].
CROS, A ;
POLLAK, RA ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :258-259
[10]  
Fehlner F. P., 1970, OXID MET, V2, P59