INTERACTION BETWEEN CHROMIUM-OXIDE AND CHROMIUM SILICIDE

被引：7

作者：

CROS, A ^{[1
]}

POLLAK, RA ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.331694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：258 / 259

页数：2

共 9 条

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[2] OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM
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ISHII, K
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[J]. JOURNAL OF SOLID STATE CHEMISTRY, 1976, 17 (04) : 425 - 430
[4] KRAUTLE H, 1974, P INT C APPLICATIONS, P193
[5] Levin E.M., 1964, MGO FEO SIO2 PHASE D
[6] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792
[7] REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS
OTTAVIANI, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1112 - 1119
[8] REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES
PRETORIUS, R
HARRIS, JM
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 667 - &
[9] Tu K. N., 1978, THIN FILMS INTERDIFF