OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM

被引：53

作者：

GRUNTHANER, PJ

GRUNTHANER, FJ

SCOTT, DM

NICOLET, MA

MAYER, JW

机构：

[1] CALTECH,PASADENA,CA 91125

[2] CORNELL UNIV,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：641 / 648

页数：8

共 21 条

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[8] XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE
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[9] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
GRUNTHANER, FJ
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453
[10] GRUNTHANER FJ, 1980, PHYSICS MOS INSULATO, P290