GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES

被引：69

作者：

CRIDER, CA ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：417 / 419

页数：3

共 18 条

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS
ANDERSON, RM
REITH, TM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1337 - 1347
[2] ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION
BINDELL, JB
COLBY, JW
WONSIDLER, DR
POATE, JM
CONLEY, DK
TISONE, TC
[J]. THIN SOLID FILMS, 1976, 37 (03) : 441 - 452
[3] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS
CANALI, C
CATELLANI, C
PRUDENZIATI, M
WADLIN, WH
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (01) : 43 - 45
[4] UHV CHAMBER FOR METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STUDIES
CRIDER, CA
POATE, JM
ROWE, JE
WHEATLEY, GH
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 701 - 704
[5] UHV FACILITY FOR METAL-SEMICONDUCTOR THIN-FILM STUDIES
CRIDER, CA
POATE, JM
ROWE, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 215 - 218
[6] CRIDER CA, 1979, THESIS PRINCETON U
[7] INTERDIFFUSION AND COMPOUND FORMATION IN THIN FILMS OF PD OR PT ON SI SINGLE CRYSTALS
DROBEK, J
SUN, RC
TISONE, TC
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (01): : 243 - +
[8] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM
HIRAKI, A
NICOLET, MA
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 178 - &
[9] ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI
KAWAMURA, T
SHINODA, D
MUTA, H
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 101 - +
[10] BEAM-LEAD TECHNOLOGY
LEPSELTE.MP
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02): : 233 - &

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