UHV FACILITY FOR METAL-SEMICONDUCTOR THIN-FILM STUDIES

被引:5
作者
CRIDER, CA [1 ]
POATE, JM [1 ]
ROWE, JE [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 02期
关键词
D O I
10.1116/1.569482
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:215 / 218
页数:4
相关论文
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EVANS, CA .
APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45
[2]  
HAGSTRUM HD, 1976, EXPT METHODS CATALYT, V3, pCH3
[3]   KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J].
POATE, JM ;
TISONE, TC .
APPLIED PHYSICS LETTERS, 1974, 24 (08) :391-393
[4]  
POATE JM, 1978, ELECTROCHEMICAL SOC
[5]  
POATE JM, 1976, EXPT METHODS CATALYT, V3, pCH5