ELECTRON INTERVALLEY SCATTERING IN GALLIUM-ARSENIDE

被引:17
作者
MICKEVICIUS, R
REKLAITIS, A
机构
[1] Semicond. Phys. Inst., Acad. of Sci., Vilnius, Lithuanian SSR
关键词
D O I
10.1088/0268-1242/5/8/001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors briefly review the experimental and theoretical studies of electron intervalley transfer in gallium arsenide. The review includes the data obtained by time-resolved optical measurements, high-field transport studies, quasiballistic transport investigations, etc, and contains information about electron intervalley scattering intensity. Despite the occurrence of a number of recent studies devoted to electron intervalley transfer in gallium arsenide the problem concerning the intensity of the Gamma -L intervalley scattering is shown to be still answered. It is shown that the different experiments and their interpretations yield quite different values of the Gamma -L intervalley coupling constant DGamma L which varies in the range (1.5-10)*108 eV cm-1. They have tried to understand these contradictory results in terms of electron trapping at resonant impurity states and in terms of non-conventional scattering mechanisms, which are important at high excitation levels and energies. The role of hot phonons and electron intervalley Gamma -X and L-X scattering in the electron relaxation and intervalley transfer is analysed and discussed. It is demonstrated that inclusion of hot phonons and the X valleys allows the explanation of some contradictory experimental results in the framework of one intervalley scattering model.
引用
收藏
页码:805 / 812
页数:8
相关论文
共 64 条
[61]  
Rosker MJ, Wise FM, Tang CL, Appl. Phys. Lett., 49, 25, (1986)
[62]  
Bailey DW, Stanton CJ, Artaki MA, Hess K, Wise FW, Tang CL, Solid-State Electron., 31, 3-4, (1988)
[63]  
Gruzinskis V, Mykolaitis G, Reklaitis A, Liet. Fiz. Rink., 28, 4, (1988)
[64]  
Beletskij NI, Diadchenko AV, Polianskij NE, Prokhorov ED