A NEW MAJORITY CARRIER DIODE - THE CAMEL DIODE

被引：11

作者：

SHANNON, JM

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：301 / 304

页数：4

相关论文

共 6 条

[1]

BETHE HA, 1942, 4312 MIT RAD LAB REP

[2] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].

BLOOD, P ;

BROWN, WL ;

MILLER, GL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182

[3]

Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[4] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].

SHANNON, JM .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543

[5] MAJORITY-CARRIER CAMEL DIODE [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :63-65

[6] INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :75-77