LIGHT-CURRENT CHARACTERISTICS OF INGAASP LIGHT-EMITTING-DIODES

被引：22

作者：

TEMKIN, H

CHIN, AK

DIGIUSEPPE, MA

KERAMIDAS, VG

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：405 / 407

页数：3

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[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
ASADA, M
SUEMATSU, Y
ARAI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P214
[3] CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6095 - 6100
[4] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[5] RADIANCE SATURATION IN SMALL-AREA GALNASP-LNP AND GAALAS-GAAS LEDS
GOODFELLOW, RC
CARTER, AC
REES, GJ
DAVIS, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) : 365 - 371
[6] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[7] TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
NAHORY, RE
POLLOCK, MA
DEWINTER, JC
[J]. ELECTRONICS LETTERS, 1979, 15 (21) : 695 - 696
[8] SHAH J, UNPUBLISHED
[9] TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE OF NORMAL-INGAASP
TEMKIN, H
KERAMIDAS, VG
POLLACK, MA
WAGNER, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1574 - 1578
[10] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
THOMPSON, GHB
HENSHALL, GD
[J]. ELECTRONICS LETTERS, 1980, 16 (01) : 42 - 44