FIELD ION-SCANNING TUNNELING MICROSCOPE EQUIPPED WITH MOLECULAR-BEAM EPITAXY AND ITS APPLICATION TO STUDY SEMICONDUCTOR SURFACE-STRUCTURE

被引：11

作者：

MIWA, S ^{[1
]}

HAGA, Y ^{[1
]}

MORITA, E ^{[1
]}

ARAKAWA, S ^{[1
]}

HASHIZUME, T ^{[1
]}

SAKURAI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,IMR,AOBA KU,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3B期

关键词：

FIELD-ION SCANNING TUNNELING MICROSCOPE; MBE; GAAS(100); 2; X; 4; SI(110); 16;

D O I：

10.1143/JJAP.32.1508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a new combined system of a field-ion scanning tunneling microscope (FI-STM) and a molecular beam epitaxy (MBE) growth chamber equipped with six Knudsen-cells and reflection high energy electron diffraction (RHEED). This system allows us to observe compound semiconductor surfaces such as GaAs while keeping their surfaces clean. In this paper, this system was applied to GaAs(100) and Si(110) surfaces. A GaAs sample was heated up to 550-degrees-C and a GaAs thin epitaxial film was grown by MBE. 2 x, 4 x structures were observed by RHEED and the sample was moved to the FI-STM chamber where STM images of 2 x 4 reconstructed GaAs(100) surfaces were obtained. Besides the observation of GaAs, FI-STM was also applied to the Si(110) surface. We have studied the change of the Si(110) surface structures at different conditions of heating and cooling.

引用

页码：1508 / 1510

页数：3

共 7 条

[1] A SCANNING TUNNELING MICROSCOPY SPECTROSCOPY SYSTEM FOR CROSS-SECTIONAL OBSERVATIONS OF EPITAXIAL LAYERS OF SEMICONDUCTORS
KATO, T
TANAKA, I
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (06) : 1664 - 1667
[2] PHASE-TRANSITIONS ON CLEAN SI(110) SURFACES
OLSHANETSKY, BZ
SHKLYAEV, AA
[J]. SURFACE SCIENCE, 1977, 67 (02) : 581 - 588
[3] SCANNING TUNNELING MICROSCOPY COMPARISON OF GAAS(001) VICINAL SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
PASHLEY, MD
HABERERN, KW
GAINES, JM
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (04) : 406 - 408
[4] NEW VERSATILE ROOM-TEMPERATURE FIELD-ION SCANNING TUNNELING MICROSCOPY
SAKURAI, T
HASHIZUME, T
HASEGAWA, Y
KAMIYA, I
SANO, N
YOKOYAMA, K
TANAKA, H
SUMITA, I
HYODO, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 324 - 326
[5] FIELD ION-SCANNING TUNNELING MICROSCOPY
SAKURAI, T
HASHIZUME, T
KAMIYA, I
HASEGAWA, Y
SANO, N
PICKERING, HW
SAKAI, A
[J]. PROGRESS IN SURFACE SCIENCE, 1990, 33 (01) : 3 - 89
[6] VANLOENEN EJ, 1988, J MICROSC-OXFORD, V152, P487
[7] SURFACE RECONSTRUCTION ON A CLEAN SI(110) SURFACE OBSERVED BY RHEED
YAMAMOTO, Y
INO, S
ICHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L331 - L334

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