TRANSPARENT GATE SILICON PHOTODETECTORS

[1] TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 128 - 132

[2] QUANTUM EFFICIENCY OF A SILICON GATE CHARGE-COUPLED OPTICAL IMAGING ARRAY [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 675 - 685

[3] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1719 - 1725

[4] HETEROJUNCTION SOLAR-CELLS OF SNO 2/SI [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 107 - 123

[5] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1368 - &

[6] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

[7] HAACKE G, 1976, APPL PHYS LETT, V28, P622, DOI 10.1063/1.88589

[8] Heavens O. S., 1955, OPTICAL PROPERTIES T

[9] OPTICAL-CONSTANTS OF EPITAXIAL SILICON IN REGION 1-3.3 EV [J]. PHYSICA SCRIPTA, 1975, 12 (06): : 342 - 344

[10] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

[1] TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 128 - 132

[2] QUANTUM EFFICIENCY OF A SILICON GATE CHARGE-COUPLED OPTICAL IMAGING ARRAY [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 675 - 685

[3] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1719 - 1725

[4] HETEROJUNCTION SOLAR-CELLS OF SNO 2/SI [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 107 - 123

[5] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1368 - &

[6] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

[7] HAACKE G, 1976, APPL PHYS LETT, V28, P622, DOI 10.1063/1.88589

[8] Heavens O. S., 1955, OPTICAL PROPERTIES T

[9] OPTICAL-CONSTANTS OF EPITAXIAL SILICON IN REGION 1-3.3 EV [J]. PHYSICA SCRIPTA, 1975, 12 (06): : 342 - 344

[10] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]